New materials and nanostructures for photonics and electronics
The III-Nitride Optoelectronics team is noted for its leadership position in the growth of h-BN as an electronic material and also as a sacrificial release layer. Our demonstration devices include LEDs, gas sensors, power electronics, solar cells, and neutron detectors. In addition to our cutting edge work with h-BN, we have also published extensively in nano-selective area growth and micro-selective area growth.
Ongoing Projects
1) InGaN-based Photovoltaics (INMOST ANR project): Using nano-pyramid based InGaN absorber, we hope to achieve solar cells with indium content larger than 30% which is the goal to realize high efficiency InGaN/Si tandem solar cells. The goal is also to combine this approach with the BN-based lift-off and transfer on copper.
2) 2D on 2D BN on graphene (BONEG ANR project): The goal of this project is to validate the working principle of tunnel field effect transistors built from 2-dimensional heteroepitaxial Boron nitride/Epigraphene/SiC films, with a viable large-scale integration scheme.
3) Gas sensors (CLEANING ANR Project): This project targets several paths towards HEMT gas sensors that can operate at high temperatures and in harsh environments in general with the ultimate goal of demonstrating a packaged and interfaced gas sensor that can simultaneously and selectively detect NO, NO2, and NH3 concentrations. Approaches include use of nano-thickness BGaN layers, novel nano-structured gates, and innovative packaging approaches.
4) Neutron detector (GANEX LABEX): Using enriched 10B at 97% in BN and MSM device structures, efficient self-powered solid-state thermal neutron detectors have been fabricated and tested.
5) Doping of BN: The objective of this project is to experimentally study the electrical behavior of Mg incorporated h-BN. In order to evaluate the potential of h-BN with Mg doping for device applications, we fabricate Mg doped h-BN/n-AlGaN heterostructures and report I–V characteristics as a function of temperature, under UV illumination.
6) 2D-hBN Mechanical Lift-off for Heterogeneous Integration and Flexible Electronics and Optoelectronics: The goal of this project is to develop efficient, large-scale and low-cost processes for heterogeneous integration of III-Nitride electronic and optoelectronic devices (HEMTs, LEDs and solar cells) and their transfer onto rigid and flexible substrates.
7) Van der Waals and Remote Epitaxy: Two-dimensional h-BN layers are an ideal substrate and can be assembled into 2D van der Waals heterostructures enabling the emergence of novel physical phenomena. To bring this h-BN along with other 2D material close to commercialization, a reliable method to precisely transfer large-area h-BN layers with high structural quality and better understanding of growth mechanisms of other materials on top of it is highly desirable.